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PD- 94207 SMPS MOSFET IRFB61N15D HEXFET(R) Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V RDS(on) max 0.032 ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw TO-220AB Max. 60 42 250 2.4 330 2.2 30 3.7 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Notes Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient through are on page 8 Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 5/3/01 IRFB61N15D Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.18 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.032 VGS = 10V, ID = 36A 5.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 22 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 95 26 45 18 110 28 51 3470 690 150 4600 310 580 Max. Units Conditions --- S VDS = 50V, ID = 37A 140 ID = 37A 39 nC VDS = 120V 68 VGS = 10V, --- VDD = 75V --- ID = 37A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 520 37 33 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 60 --- --- showing the A G integral reverse --- --- 250 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 37A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 37A --- 1340 2010 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB61N15D 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 4.5V 1 0.1 4.5V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 0.1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 ID = 62A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 100 TJ = 175 C 2.5 10 2.0 1 1.5 TJ = 25 C 0.1 V DS = 25V 20s PULSE WIDTH 4 6 8 10 12 1.0 0.5 0.01 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB61N15D 100000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 37A VDS = 120V VDS = 75V VDS = 30V VGS , Gate-to-Source Voltage (V) 16 10000 C, Capacitance(pF) Ciss 1000 12 Coss 8 100 Crss 4 10 1 10 100 1000 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 140 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100 TJ = 175 C ID, Drain-to-Source Current (A) 100 100sec 10 1msec 10 1 TJ = 25 C 1 Tc = 25C Tj = 175C Single Pulse 1 10 100 10msec 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 0.1 VSD ,Source-to-Drain Voltage (V) 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFB61N15D 60 VDS VGS RG RD 50 D.U.T. + -VDD 40 ID , Drain Current (A) 10V 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB61N15D 1200 EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP BOTTOM 1000 VDS L D R IV E R ID 15A 26A 37A 800 RG VV 2 0GS D .U .T IA S tp 0 .0 1 + - VD D A 600 Fig 12a. Unclamped Inductive Test Circuit 400 200 V (B R )D SS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F 10 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFB61N15D Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB61N15D TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.5 4 (.4 15) 10.2 9 (.4 05) 3 .78 (.14 9) 3 .54 (.13 9) -A6.47 (.2 55) 6.10 (.2 40) -B4 .69 (.18 5) 4 .20 (.16 5) 1.3 2 (.052) 1.2 2 (.048) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.15 (.04 5) MIN 1 2 3 LE A D A S S IG N ME N T S 1 - G A TE 2 - D R A IN 3 - SO URCE 4 - D R A IN 14.09 (.5 55 ) 13.47 (.5 30 ) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1.40 (.05 5) 1.15 (.04 5) 0 .93 (.0 37 ) 0 .69 (.0 27 ) M BAM 3X 0.55 (.0 22) 0.46 (.0 18) 0.3 6 (.01 4) 2 .5 4 (.1 00) 2X N O TE S : 1 D IME N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14.5 M, 19 82. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2 .92 (.115 ) 2 .64 (.104 ) 3 O U TL IN E C O NF O R MS T O JE D E C O U TL IN E T O -2 20 A B . 4 H E A T S IN K & LE A D ME A S U R E ME N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD 37A, di/dt 170A/s, VDD V(BR)DSS, Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ 175C Starting TJ = 25C, L = 0.98mH RG = 25, IAS = 37A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.5/01 8 www.irf.com |
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